Invited column-“Infrared semiconductor lasers”

Progress in mid-and far-infrared quantum cascade laser (invited)
Zhao Yue, Zhang Jinchuan, Liu Chuanwei, Wang Lijun, Liu Junqi, Liu Fengqi
2018, 47(10): 1003001. doi: 10.3788/IRLA201847.1003001
[Abstract](897) [PDF 4022KB](188)
Quantum cascade laser (QCL) has been widely applied in directed infrared countermeasures (DIRCM) system, free space optical communication (FSOC) and gas sensing since it has advantages of high efficiency, compact volume, low electrical consumption and wide wavelength tunability. In this paper, the progress in QCLs made over the last 20 years was reviewed. The principle of emission and overview of QCL was demonstrated in the introduction. The design of active region for high output power QCL aiming at DIRCM was described in the first part. In the second part, the progress in distributed-feedback QCLs for gas sensing was introduced. In the third part, the research of high brightness QCL phase locked arrays was demonstrated. In the fourth part, the high speed QCL for FSOC was discussed. Finally, a new device, QCL frequency comb was introduced for its crucial influence on mid-infrared frequency comb.
Development of beam combining technology in mid-infrared semiconductor lasers (invited)
Cao Yuxuan, Shu Shili, Sun Fangyuan, Zhao Yufei, Tong Cunzhu, Wang Lijun
2018, 47(10): 1003002. doi: 10.3788/IRLA201847.1003002
[Abstract](708) [PDF 1070KB](203)
Mid-infrared semiconductor lasers possess the advantages of small volume and high efficiency and have important application prospects in the field of environmental detection, space communication and military defense. However, the output power of mid-infrared semiconductor laser device is low, which limits its application in the above fields. Laser beam combining technology is an important approach to enhance the power of mid-infrared semiconductor lasers. In this paper, several beam combining methods and the latest progress of mid-infrared semiconductor lasers were introduced in detail.
Research progress of 3-4μm antimonide interband cascade laser (invited)
Zhang Yi, Zhang Yu, Yang Cheng'ao, Xie Shengwen, Shao Fuhui, Shang Jinming, Huang Shushan, Yuan Ye, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan
2018, 47(10): 1003003. doi: 10.3788/IRLA201847.1003003
[Abstract](657) [PDF 1168KB](100)
The mid-infrared lasers of 3-4 m can be widely used in industrial gas detection, medical treatment and free space optical communication. At present, the antimonide semiconductor interband cascade laser is an ideal scheme for realizing 3-4 m in the middle infrared band. The interband cascade laser (ICL) may be considered the hybrid of a conventional diode laser that generates photons via electron-hole recombination, and an intersubband-based quantum cascade laser (QCL) that stacks multiple stages for enhanced current efficiency. This paper gives an overview of the basic working principle of inter-band cascade lasers, and describes the development history of major inter-band cascade lasers, including the University of Oklahoma, the US Naval Laboratory, and the University of Woodsburg. The performance of the interband cascade laser developed by the Institute of Semiconductors of the Chinese Academy of Sciences is also included. By analyzing the difficulties in designing and preparing the laser, the technical solution to further improve the performance of this kind of lasers is expounded.
Research progress of GaSb based optically pumped semiconductor disk lasers (invited)
Shang Jinming, Zhang Yu, Yang Cheng'ao, Xie Shengwen, Huang Shushan, Yuan Ye, Zhang Yi, Shao Fuhui, Xu Yingqiang, Niu Zhichuan
2018, 47(10): 1003004. doi: 10.3788/IRLA201847.1003004
[Abstract](467) [PDF 1390KB](79)
GaSb based optically pumped semiconductor disk lasers (OP-SDLs) attracts considerable attention in novel mid-infrared laser device research field for their potential excellent beam quality and high output power. The epitaxy structure and basic principle of GaSb based OP-SDLs wafers were summarized. The development of GaSb based OP-SDLs at 2 m wavelength was reviewed respectively by analyzing the aspects of wavelength extending, power scaling, line-width narrowing, short-pulse generation and effective thermal management. The technical development direction and application prospects of this type of laser were discussed.